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2SB1455 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage.
  • Large current capacity.
  • Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1455/2SD2203] ( ) : 2SB1455 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Ju.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1455/2SD2203] ( ) : 2SB1455 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)90 (–)80 (–)6 (–)7 (–)12 2.