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2SB808 - PNP/NPN Epitaxial Planar Silicon Transistors

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Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] ( ) : 2SB808 B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)20 (–)15 (–)5 (–)0.7 (–)1.