2SB880
2SB880 is PNP Transistor manufactured by SANYO.
Features
- High DC current gain.
- Large current capacity and wide ASO.
- Low saturation voltage.
Package Dimensions unit:mm 2010C
[2SB880/2SD1190]
( ) : 2SB880
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Tc=25˚C
Conditions
Ratings (- )70 (- )60 (- )6 (- )4 (- )6 1.75 30 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO h FE f T VCE(sat)
VCB=(- )40V, IE=0 VEB=(- )5V, IC=0 VCE=(- )2V, IC=(- )2A
VCE=(- )5V, IC=(- )2A IC=(- )2A, IB=(- )4m A
VBE(sat) IC=(- )2A, IB=(- )4m A
Ratings min typ
5000 20 0.9
(- )1.0 max (- )0.1 (- )3.0
(- )1.5
(- )2.0
Unit m A m A
MHz V V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such...