2SB880 - PNP Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -2A Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A Complement to Type 2SD1190 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

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Datasheet Details

Part number	2SB880
Manufacturer	INCHANGE
File Size	210.25 KB
Description	PNP Transistor
Datasheet	2SB880 Datasheet
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isc Silicon PNP Darlington Power Transistor 2SB880 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.

Published: Sep 17, 2020 |