2SB887 - PNP Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 1500(Min)@ IC= -5A Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A Complement to Type 2SD1197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	2SB887
Manufacturer	INCHANGE
File Size	214.20 KB
Description	PNP Transistor
Datasheet	2SB887 Datasheet
Additional preview pages of the 2SB887 datasheet.

📁 Similar Datasheet

2SB887 - PNP Transistor (Sanyo Semicon Device)
2SB887 - SILICON POWER TRANSISTOR (SavantIC)
2SB880 - PNP Transistor (Sanyo Semicon Device)
2SB880 - SILICON POWER TRANSISTOR (SavantIC)
2SB881 - PNP Transistor (Sanyo Semicon Device)
2SB881 - Silicon PNP Power Transistor (Inchange Semiconductor)
2SB882 - PNP Transistor (Sanyo Semicon Device)
2SB882 - Silicon PNP Power Transistor (Inchange Semiconductor)
2SB883 - PNP Transistor (Sanyo Semicon Device)
2SB883 - Silicon PNP Power Transistor (Inchange Semiconductor)

Other Datasheets by INCHANGE

2SB880 - PNP Transistor
2SB884 - PNP Transistor
2SB885 - PNP Transistor
2SB886 - PNP Transistor
2SB812 - PNP Transistor
2SB813 - PNP Transistor
2SB816 - PNP Transistor
2SB817C - PNP Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Darlington Power Transistor 2SB887 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1197 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.

Published: Sep 17, 2020 |