2SB884
2SB884 is PNP Transistor manufactured by SANYO.
Features
- High DC current gain.
- High current capacity and wide ASO.
- Low saturation voltage.
Package Dimensions unit:mm 2010C
[2SB884/2SD1194]
( ) : 2SB884
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO h FE VCE(sat)
VCB=(- )80V, IE=0 VEB=(- )5V, IC=0 VCE=(- )3V, IC=(- )1.5A IC=(- )1.5A, IB=(- )3m A
Base-to-Emitter Saturation Voltage Gain-Bandwidth Product
VBE(sat) IC=(- )1.5A, IB=(- )3m A f T VCE=(- )5V, IC=(- )1.5A
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46
2 : Collector
3 : Emitter
Ratings (- )110 (- )100 (- )6 (- )3 (- )5 1.75 30 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
4000 0.9
(- 1.0)
20 max (- )0.1
(- )3
(-...
