2SB884 Overview
Product Specification Silicon PNP Power Transistor CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA, RBE=? IC=-5mA, IE=0 IC=-1.5A ,IB=-3mA IC=-1.5A ,IB=-3mA...
