2SB886 Datasheet | SavantIC

DESCRIPTION - With TO-220C package - plement to type 2SD1196 - DARLINGTON - High DC current gain - High current capacity and wide ASO - Low saturation voltage APPLICATIONS - Motor drivers, printer - Hammer drivers - Relay drivers, - Voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -8 -12 40 W UNIT V V V A A Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-50m A; RBE=? IC=-5m A; IE=0 IC=-4A; IB=-8m A IC=-4A; IB=-8m A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-5V IC=-4A ; VCE=-3V 1500 20 4000 MIN -100 -110 -1.0 TYP. SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO f T h FE UNIT V V -1.5 -2.0 -0.1 -3.0 V V m A m A MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A;IB1=-IB2=-8m A RL=12.5E,Duty cycle F1% VCC=50V 0.7 1.4 1.5 µs µs µs Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)...