2SB886
2SB886 is PNP Transistor manufactured by SANYO.
Features
- High DC current gain.
- High current capacity and wide ASO.
- Low saturation voltage.
Package Dimensions unit:mm 2010C
[2SB886/2SD1196]
( ) : 2SB886
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO h FE f T VCE(sat)
VCB=(- )80V, IE=0 VEB=(- )5V, IC=0 VCE=(- )3V, IC=(- )4A VCE=(- )5V, IC=(- )4A IC=(- )4A, IB=(- )8m A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(- )4A, IB=(- )8m A
JEDEC : TO-220AB 1 : Base
EIAJ : SC46
2 : Collector
3 : Emitter
Ratings (- )110 (- )100 (- )6 (- )8 (- )12 1.75 40 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
4000 20 0.9
(- 1.0) max (- )0.1 (- )3.0
(- )1.5
(- )2.0
Unit m A m...
