Datasheet4U Logo Datasheet4U.com

2SB893 - PNP Transistor

Key Features

  • Low saturation voltage : VCE(sat)≤.
  • 0.45V (IC=.
  • 1.5A, IB=.
  • 0.15A).
  • Large current capacity and wide ASO : IC max=.
  • 2.5A. Package Dimensions unit:mm 2003A [2SB893] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB893 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SB891 Silicon PNP Power Transistor Inchange Semiconductor
2SB891 Epitaxial Planar PNP Silicon Transistor Rohm
2SB891F Medium Power Transistor Rohm
2SB891F SILICON POWER TRANSISTOR SavantIC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB892 PNP Transistor
2SB808 PNP/NPN Epitaxial Planar Silicon Transistors
2SB815 PNP / NPN Epitaxial Planar Silicon Transistors
2SB816 PNP/NPN Epitaxial Planar Silicon Transistors
2SB817 PNP Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, strobes. Features · Low saturation voltage : VCE(sat)≤–0.45V (IC=–1.5A, IB=–0.15A). · Large current capacity and wide ASO : IC max=–2.5A.