Miniature package facilitates miniaturization in end products.
High breakdown voltage. Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
C.
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Ordering number : EN7198A
2SA1179N / 2SC2812N
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179N / 2SC2812N Low-Frequency General-Purpose
Amp Applications
Features
• Miniature package facilitates miniaturization in end products. • High breakdown voltage.