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2SC2812 - Silicon Epitaxial Planar Transistor

Key Features

  • z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812.

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Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC2812 L4/L5/L6/L7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 55 50 5 150 200 -55 to +150 Units V V V mA mW ℃ C241 Rev.A www.gmicroelec.