2SC2812 Datasheet PDF

FEATURES

z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812

APPLICATIONS

z NPN Silicon Epitaxial Planar Transistor. z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC2812 L4/L5/L6/L7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 55 50 5 150 200 -55 to +150 Units V V V mA mW ℃ C241 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC2812

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 55 V Collector-emitter breakd