• Part: 2SC2812
  • Description: Silicon Epitaxial Planar Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 162.71 KB
Download 2SC2812 Datasheet PDF
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Datasheet Summary

Production specification Silicon Epitaxial Planar Transistor Features z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking L4/L5/L6/L7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 55 50 5 150 200 -55 to +150 Units V V V mA mW ℃ C241...