2SC2812
Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS z NPN Silic...
| Part | 2SC2812 |
|---|---|
| Description | Silicon Epitaxial Planar Transistor |
| Category | Transistor |
| Manufacturer | Galaxy Microelectronics |
| Size | 162.71 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC2812N | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| 2SC2812N | onsemi | Bipolar Transistor |
| 2SC2812 | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| C2814 | onsemi | 2SC2814 |
| 2SC2814 | SANYO | NPN Transistor |