| Part Number | 2SC2812 |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview | Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS z NPN Silic. z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). z High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC2812 L4/L5/L6/L7 SOT-23 Package Code SOT-23 MAX. |
2SC2812 Datasheet
The 2SC2812 is a Silicon Epitaxial Planar Transistor.
| Part Number | 2SC2812 |
|---|---|
| Description | PNP / NPN Epitaxial Planar Silicon Transistors |
| Manufacturer | SANYO |
| Overview |
Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812 Low-Frequency General-Purpose
Amplifier Applications
Fea.
* Miniature package facilitates miniaturization in end products. * High breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Curr. |