2SC3000 Datasheet | SANYO

Features - FBET series. - High f T and small Cre. NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO h FE f T Cre rbb'CC NF VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1m A VCE=6V, IC=1m A VCB=6V, f=1MHz VCE=6V, IC=1m A, f=31.9MHz VCE=6V, IC=1m A, f=100MHz VCE=6V, IC=1m A, f=100MHz - : The 2SC2300 are classified by 1m A h FE as follows : 60 D 120 100 E 200 160 F 320 B : Base C : Collector E : Emitter SANYO : NP Ratings 30 20 5 30 250 125 - 55 to +125 Unit V V V m A m W ˚C ˚C Ratings min typ 60- 200 320 0.7 1.1 15 3.0 25 max 0.1 0.1 320- 1.4 22 Unit µA µA MHz p F ps d B d...