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2SC3417 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage : VCEO≤300V.
  • Excellent high frequency characteristics : Cre=1.8pF(typ).
  • Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications. Package Dimensions unit:mm 2009B [2SA1353/2SC3417] 8.0 4.0 2.7 Features · High breakdown voltage : VCEO≤300V. · Excellent high frequency characteristics : Cre=1.8pF(typ). · Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.