2SC3417
Features
- High breakdown voltage : VCEO≤300V.
- Excellent high frequency characteristics : Cre=1.8p F(typ).
- Adoption of MBIT process.
1.5 7.0
1.6 0.8 0.8 0.6
( ) : 2SA1353
2.4 4.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 :Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (- )300 (- )300 (- )5 (- )100 (- )200 1.2
Unit V V V m A m A W W
Tc=25˚C
7 150
- 55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T D 60 to 120 E 100 to 200 VCB=(- )200V, IE=0 VEB=(- )4V, IC=0 VCE=(- )10V, IC=(- )10m A VCE=(- )30V, IC=(- )10m A F 160 to 320 40 70 Conditions Ratings min typ max (-...
