2SC3416
Features
- High breakdown voltage : VCEO≤200V.
- Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2p F (NPN), 1.7p F (PNP).
- Adoption of FBET process.
1.5 7.0
1.6 0.8 0.8 0.6
( ) : 2SA1352
2.4 4.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (- )200 (- )200 (- )5 (- )100 (- )200 1.2
Unit V V V m A m A W W
Tc=25˚C
Tj Tstg
5 150
- 55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T D 60 to 120 E 100 to 200 F 160 to 320 VCB=(- )200V, IE=0 VEB=(- )4V, IC=0 VCE=(- )10V, IC=(- )10m A VCE=(-...
