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Inchange Semiconductor
2SC3416
DESCRIPTION - High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) - plement to Type 2SA1352 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ Junction Temperature 1.2 W ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3416 isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power...