Datasheet Details
| Part number | 2SC3416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3416-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3416-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3416 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3416 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3419 | NPN Transistor |
| 2SC3409 | NPN Transistor |
| 2SC3420 | NPN Transistor |
| 2SC3423 | NPN Transistor |
| 2SC3424 | NPN Transistor |
| 2SC3447 | NPN Transistor |
| 2SC3450 | NPN Transistor |
| 2SC3451 | NPN Transistor |
| 2SC3456 | NPN Transistor |
| 2SC3457 | NPN Transistor |