Datasheet Details
| Part number | 2SC3419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.09 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3419-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419.
| Part number | 2SC3419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.09 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3419-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High power dissipation ·Complementary to 2SA1356 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.8 A 5.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ;
IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3419 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3416 | NPN Transistor |
| 2SC3409 | NPN Transistor |
| 2SC3420 | NPN Transistor |
| 2SC3423 | NPN Transistor |
| 2SC3424 | NPN Transistor |
| 2SC3447 | NPN Transistor |
| 2SC3450 | NPN Transistor |
| 2SC3451 | NPN Transistor |
| 2SC3456 | NPN Transistor |
| 2SC3457 | NPN Transistor |