Datasheet4U Logo Datasheet4U.com

2SC3644 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High reliability (Adoption of HVP process).
  • High speed.
  • High breakdown voltage.
  • Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3640 Silicon NPN Power Transistor Inchange Semiconductor
2SC3642 NPN Transistor INCHANGE
2SC3645 Transistor Kexin
2SC3645 PNP / NPN Epitaxial Planar Silicon Transistors ON Semiconductor
2SC3646 Transistor Kexin

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3642 NPN Triple Diffused Planar Silicon Transistor
2SC3643 NPN Triple Diffused Planar Silicon Transistor
2SC3645 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3646 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process.