2SC3647 Key Features
- Adoption of FBET, MBIT processes
- High breakdown voltage and large current capacity
- Fast switching speed
- Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2SC3647 | NPN EPITAXIAL SILICON TRANSISTOR |
Kexin Semiconductor |
2SC3647 | NPN Transistor |
| 2SC3647 | Bipolar Transistor |