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2SC3647 - PNP / NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatu.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC3642 NPN Triple Diffused Planar Silicon Transistor
2SC3643 NPN Triple Diffused Planar Silicon Transistor
2SC3644 NPN Triple Diffused Planar Silicon Transistor
2SC3645 PNP/NPN Epitaxial Planar Silicon Transistors
2SC3646 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)2 (--)3 500 1.