2SC3676 - NPN Transistor

SANYO (now Panasonic)

Key Features

High breakdown voltage (VCEO min=900V).
Small Cob (Cob typ=5.0pF).
Wide ASO (Adoption of MBIT process).
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junctio.

2SC3676 npn transistor by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	2SC3676
Manufacturer	SANYO (now Panasonic)
File Size	94.90 KB
Description	NPN Transistor
Datasheet	2SC3676 Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
2SC3675	NPN Transistor
2SC3600	PNP/NPN Epitaxial Planar Silicon Transistors
2SC3601	PNP / NPN Epitaxial Planar Silicon Transistors
2SC3636	NPN Triple Diffused Planar Silicon Transistor
2SC3637	NPN Triple Diffused Planar Silicon Transistor

Full PDF Text Transcription (Reference)

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Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process).