2SC3777 Datasheet PDF - Sanyo Semicon Device NPN Epitaxial Planar Silicon Transistor Specs

2SC3777 - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

Small noise figure : NF=3.0dB typ (f=0.9GHz).
High power gain : MAG=12dB typ (f=0.9GHz).
High cutoff frequency : fT=3.5GHz typ. Package Dimensions unit:mm 2004A [2SC3777] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg El.

Datasheet Details

Part number	2SC3777
Manufacturer	Sanyo Semicon Device
File Size	124.77 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3777 Datasheet
Additional preview pages of the 2SC3777 datasheet.

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Full PDF Text Transcription

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Ordering number:EN1950B NPN Epitaxial Planar Silicon Transistor 2SC3777 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF frequency converters, local oscillators, lownoise amplifiers, wide-band amplifiers. Features · Small noise figure : NF=3.0dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.5GHz typ.

Published: Mar 22, 2005 |