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2SC3779 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Small noise figure : NF=1.5dB typ (f=0.9GHz).
  • High power gain : MAG=14dB typ (f=0.9GHz).
  • High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2004B [2SC3779] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1954C NPN Epitaxial Planar Silicon Transistor 2SC3779 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF low-noise amplifiers, wide-band amplifiers. Features · Small noise figure : NF=1.5dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2004B [2SC3779] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 1.