2SC3807C Overview
Key Features
- Large current capacity (IC=2A)
- Adoption of MBIT process
- High DC current gain (hFE=1000 to 2000)
- Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V)
- High VEBO (VEBO≥17V)
| Part | 2SC3807C |
|---|---|
| Description | NPN Epitaxial Planar Silicon Transistor |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 72.45 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3807 | WEJ | TRANSISTOR |
| 2SC3807 | JCET | NPN Transistor |
| 2SC3807 | Foshan Eming Electronics | SILICON NPN TRANSISTOR |
| 2SC3805 | Toshiba | Silicon NPN Transistor |
| 2SC380TM | Toshiba | Silicon NPN Transistor |