FEATURES
z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 15 V IC Collector Current -Continuous 2 A Pc Power dissipation 1.2 W TJ Junction Temperature Tstg Storage Temperature 150 -55-150 ℃ ℃ 1. EMITTER 2. COLLECOTR 3. BASE ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC =10μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10μA ,IC=0 Collector cut-off current ICBO VCB=20V,IE=0 Emitter cut-off current IEBO VEB=10
JCET