The 2SC3807 is a NPN Epitaxial Planar Silicon Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC3807 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:EN2018A
NPN Epitaxial Planar Silicon Transistor
2SC3807
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpo.
* Large current capacity (IC=2A). * Adoption of MBIT process. * High DC current gain (hFE=800 to 3200). * Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). * High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitte. |
| Part Number | 2SC3807 Datasheet |
|---|---|
| Description | TRANSISTOR |
| Manufacturer | WEJ |
| Overview | RoHS 2SC3807 2SC3807 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V O. Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-ba. |
| Part Number | 2SC3807 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR (NPN) TO-126 FEATURES z Low frequency power amplifier z Large current capacity z High DC. z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VE. |
| Part Number | 2SC3807 Datasheet |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Manufacturer | Foshan Eming Electronics |
| Overview | 2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR :。 Purpose: low frequency general-purpose amplifiers, drivers. : IC , hFE ,VCE(sat),VEBO 。 Features: Large current capacity, high DC current gain, Low co. Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25. |
| Seller | Inventory | Price Breaks | Buy |
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| Voyager Components | 3 | 1+ : 1.1807342857143 USD 2+ : 0.891858396 USD 3+ : 0.78694375314286 USD 4+ : 0.68202911028572 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3807C | SANYO | NPN Epitaxial Planar Silicon Transistor |
| 2SC3807MP | SANYO | NPN Epitaxial Planar Silicon Transistor |