High reliability (adoption of HVP process). Package Dimensions
unit:mm 2049C
[2SC4030]
10.2 0.9 4.5 1.3
11.5
20.9
1.6
1.2
9.4
0.8
11.0
8.8
0.4
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collecto.
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Ordering number:EN2477B
NPN Triple Diffused Planar Silicon Transistor
2SC4030
900V/50mA Switching Applications
Features
· High breakdown voltage (VCEO min=900V). · Small Output Capacitance (Cob typ=2.0pF). · Wide ASO (adoption of MBIT process). · High reliability (adoption of HVP process).
Package Dimensions
unit:mm 2049C
[2SC4030]
10.2 0.9 4.5 1.3
11.5
20.9
1.6
1.2
9.4
0.8
11.0
8.8
0.4
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF
Conditions
2.
2SC4030 Datasheet
