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2SC4031 - Silicon NPN Transistor

Key Features

  • High breakdown voltage (VCEO min=900V).
  • Small Output Capacitance (Cob typ=1.6pF).
  • Wide ASO (adoption of MBIT process).
  • High reliability (adoption of HVP process). Package Dimensions unit:mm 2049C [2SC4031] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features · High breakdown voltage (VCEO min=900V). · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process). · High reliability (adoption of HVP process). Package Dimensions unit:mm 2049C [2SC4031] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.