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2SC4365 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.