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2SC4563 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • High fT : fT=1.2GHz typ.
  • High breakdown voltage : VCEO≥80V.
  • High current : IC=500mA.
  • Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).
  • Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Features · High fT : fT=1.2GHz typ. · High breakdown voltage : VCEO≥80V. · High current : IC=500mA. · Small reverse transfer capacitance : Cre=3.8pF (VCB=30V). · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 2.