High reliability (Adoption of HVP process). Package Dimensions
unit:mm
2010C
[2SC4579]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC.
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Ordering number:EN3243
NPN Triple Diffused Planar Silicon Transistor
2SC4579
900V/20mA Switching Applications
Features
· High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2010C
[2SC4579]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
2.