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2SC4630 - NPN TRANSISTOR

Key Features

  • High breakdown voltage (VCEO min=900V).
  • Small Cob (typical Cob=2.8pF).
  • Full isolation package.
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temp.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) 2.