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2SC4630LS - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2079D [2SC4630LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=2.8pF). Full isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • • Package Dimensions unit : mm 2079D [2SC4630LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=2.8pF). Full isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.