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2SC4709 - NPN TRANSISTOR

Key Features

  • High breakdown voltage (VCEO min=2100V).
  • Small Cob (Cob typ=1.3pF).
  • Wide ASO.
  • High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4709] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=2100V). · Small Cob (Cob typ=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4709] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.