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2SC4824 - NPN TRANSISTOR

Key Features

  • Adoption of FBET process.
  • High Gain Bandwidth product (fT=400MHz).
  • High breakdown voltage (VCEO=120V).
  • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP.
  • Usage of radial taping to meet automatic mounting. 2.6 1.4 1.2 1.0 7.5 8.5 1.6 0.5 1 2 3 0.5 ( ) : 2SA1850 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Col.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4821 NPN TRANSISTOR
2SC4826 NPN TRANSISTOR
2SC4827 PNP/NPN Epitaxial Planar Silicon Transistor
2SC4836 NPN Epitaxial Planar Silicon Transistor
2SC4837 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN4132 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applications · High Definition CRT Display Video Output Applications, Wide-Band Amplifier. www.DataSheet4U.com Package Dimensions unit:mm 2084B [2SA1850/2SC4824] 10.5 1.9 4.5 1.2 Features · Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. · Usage of radial taping to meet automatic mounting. 2.6 1.4 1.2 1.0 7.5 8.5 1.6 0.5 1 2 3 0.