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2SC4826 - NPN TRANSISTOR

Key Features

  • Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate antomatic mounting. 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.6 0.5 0.5 1 2 3 1.0 8.5 Specifications ( ) : 2SA1852 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4821 NPN TRANSISTOR
2SC4824 NPN TRANSISTOR
2SC4827 PNP/NPN Epitaxial Planar Silicon Transistor
2SC4836 NPN Epitaxial Planar Silicon Transistor
2SC4837 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications • Package Dimensions unit : mm 2084B [2SA1852 / 2SC4826] High definition CRT display video output, wide-band amplifer. Features • • • • • Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate antomatic mounting. 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.6 0.5 0.5 1 2 3 1.0 8.