2SC4921
Features
- High DC current gain.
- On-chip bias resistance (R1=10kΩ, R2=10kΩ).
- Very small-sized package permitting 2SC4921- applied sets to be made smaller and slimmer.
- Small ON resistance.
Package Dimensions unit:mm 2106A
[2SC4921]
0.75 0.6
0 to 0.1
0.4 0.8 0.4 1.6
0.1max
0.5 0.5 1.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Input Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
VIN IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
- Characteristic of the constituent transistor. Marking : FA
Symbol
Conditions
ICBO ICEO IEBO h FE f T- Cob-
VCB=20V, IE=0 VCE=15V, IB=0 VEB=5V, IC=0 VCE=2V, IC=10m A VCE=5V, IC=10m A VCB=10V,...
