Datasheet4U Logo Datasheet4U.com

2SC5229 - NPN TRANSISTOR

Key Features

  • Low noise : NF=1.0dB typ (f=1GHz).
  • High gain : S21e2=10.5dB typ (f=1GHz).
  • High cutoff frequency : fT=6.5GHz typ.
  • Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ (f=1GHz). Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curren.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC522 SILICON NPN TRANSISTOR Toshiba
2SC5223 NPN TRANSISTOR Panasonic Semiconductor
2SC5225 NPN TRANSISTOR Hitachi Semiconductor
2SC5226A NPN Epitaxial Planar Silicon Transistor Sanyo
2SC5226A RF Transistor ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5226 NPN TRANSISTOR
2SC5227 NPN TRANSISTOR
2SC5228 NPN TRANSISTOR
2SC5230 NPN TRANSISTOR
2SC5231 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. · Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ (f=1GHz). Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.