Adoption of MBIT process. Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.5 3.2 7.2 4.5 2.8
16.1
16.0
0.9 1.2 14.0
3.6
0.75 1 2 3
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Sy.
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Ordering number : EN5696
NPN Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features
• High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.5 3.2 7.2 4.5 2.8
16.1
16.0
0.9 1.2 14.0
3.6
0.75 1 2 3
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25°C Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO220FI (LS)
2.4
Ratings 1000 450 9 4 8 2 25 150 –55 to +150
0.6 0.
2SC5416 Datasheet
