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2SC5452 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

  • High speed.
  • High breakdown voltage (VCBO=1600V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5452] 3.4 16.0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Coll.

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Datasheet Details

Part number 2SC5452
Manufacturer Sanyo Semicon Device
File Size 75.89 KB
Description NPN Triple Diffused Planar Silicon Transistor
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Full PDF Text Transcription

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Ordering number:EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5452] 3.4 16.0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.
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