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2SC5414 - NPN TRANSISTOR

Key Features

  • High gain : S21e =9.5dB typ (f=1GHz).
  • High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1.3 1.3 1 : Base 2 : Emitt.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =9.5dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1.3 1.