Package Dimensions
unit : mm 2174A
[2SC5681]
16.0 3.4 5.6 3.1
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0
21.0 4.0
22.0
8.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.
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DataSheet.in
Ordering number : ENN6607A
2SC5681
NPN Triple Diffused Planar Silicon Transistor
2SC5681
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • •
Package Dimensions
unit : mm 2174A
[2SC5681]
16.0 3.4 5.6 3.1
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process.
5.0
21.0 4.0
22.0
8.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
5.
2SC5681 Datasheet
