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2SC5607 - NPN TRANSISTOR

Key Features

  • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 0.7 3.0 3.8nom Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curre.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2033A [2SC5607] 4.0 2.2 Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA 0.7 3.0 3.