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2SC5645 - NPN TRANSISTOR

Key Features

  • Package Dimensions.
  • 0.3 3 0.8 1.6 0 to 0.1 0.2 1 2 0.4 0.5 0.5 1.6 0.4 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low-voltage operating . High gain :S21e2=9.5dB typ (f=2GHz). [2SC5645] 0.75 0.6 0.1max 0.1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6588 2SC5645 NPN Epitaxial Planar Silicon Transistor 2SC5645 UHF to S Band Low-Noise Amplifier and OSC Applications Features • • Package Dimensions • • 0.3 3 0.8 1.6 0 to 0.1 0.2 1 2 0.4 0.5 0.5 1.6 0.4 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low-voltage operating . High gain :S21e2=9.5dB typ (f=2GHz). [2SC5645] 0.75 0.6 0.1max 0.