Datasheet4U Logo Datasheet4U.com

2SC5610 - NPN TRANSISTOR

Key Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Ju.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5612 NPN TRANSISTOR Toshiba Semiconductor
2SC5615 NPN SILICON RF TRANSISTOR NEC
2SC5617 NPN SILICON RF TRANSISTOR NEC
2SC5619 SMALL-SIGNAL TRANSISTOR ETC
2SC5619 SMALL-SIGNAL TRANSISTOR Isahaya Electronics

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5611 NPN TRANSISTOR
2SC5607 NPN TRANSISTOR
2SC5637 NPN Triple Diffused Planar Silicon Transistor
2SC5639 NPN Triple Diffused Planar Silicon Transistor
2SC5645 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.