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2SC5639 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed (tf=100ns typ).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5639] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter www. DataSheet4U. com 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions 0.8 2.1 Ratings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5639] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter www.DataSheet4U.com 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions 0.8 2.