2SC5966 - NPN SILICON TRANSISTOR

Product Overview

Sanyo Semicon Device

Part number	2SC5966
Manufacturer	Sanyo Semicon Device
File Size	206.86 KB
Description	NPN SILICON TRANSISTOR
Datasheet	2SC5966 Datasheet
Additional preview pages of the 2SC5966 datasheet.

Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junctio.

📁 Similar Datasheet

2SC5960 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Electric)
2SC5967 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semiconductor Corporation)
2SC5968 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semiconductor Corporation)
2SC5902 - NPN Transistor (INCHANGE)
2SC5904 - NPN Transistor (Panasonic Semiconductor)
2SC5905 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC5906 - Silicon NPN Transistor (Toshiba)
2SC5907 - Silicon NPN Epitaxial Type Transistor (Renesas)

Other Datasheets by Sanyo Semicon Device

Published: Jul 25, 2006 |