Datasheet4U Logo Datasheet4U.com

2SD1063 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=(.
  • )0.4V max.
  • Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1063 SILICON POWER TRANSISTOR SavantIC
2SD1063 NPN Transistor INCHANGE
2SD1060 NPN Transistor INCHANGE
2SD1060 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC
2SD1060 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SD1060 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1061 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1062 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1064 PNP/NPN Epitaxial Planar Silicon Transistors
2SD1065 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO.