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2SD1063 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A Wide Area of Safe Operation Complement to Type 2SB827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for universal high current switching as solenoid driv

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Datasheet Details

Part number 2SD1063
Manufacturer INCHANGE
File Size 214.84 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for universal high current switching as solenoid driving, high speed inverter and converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1063 isc website：www.iscsemi.
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