Inchange Semiconductor 2SD1063
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1063 |
|---|---|
| Datasheet | 2SD1063 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A●Wide Area of Safe Operation
●Complement to Type 2SB827
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for universal high current switching as solenoid driving, high speed inverter and converter applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1063 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SD1063ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE=...