2SD1065 Description
·Low Collector Saturation Voltage : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SD1065 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.